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 SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
2N5241
DESCRIPTION *With TO-3 package *High breakdown voltage APPLICATIONS *Switching regulator *Inverters *Solenoid and relay drivers *Motor controls
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
MAXIMUN RATINGS(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Tc=25 CONDITIONS Open emitter Open base Open collector VALUE 400 400 5 5 125 165 -65~200 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.46 UNIT /W
SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2N5241
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
400
V
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.4A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.4A VCB=400V; IE=0 TC=125 VCE=400V; IB=0
2.0 0.2 2.0 5.0
V
ICBO
Collector cut-off current
mA
ICEO
Collector cut-off current
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE
DC current gain
IC=2.5A ; VCE=5V
15
35
2
SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5241
Fig.2 Outline dimensions
3


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